2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
Low Saturation Voltage : V
CE(sat)
= 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+_
+
_
+
_
+
_
+_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : h
FE
(1) Classification O:120 240, Y:200 400, GR:350 700
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
7
V
Collector
Current
DC
I
C
5
A
Pulse (Note1)
I
CP
8
Collector Power Dissipation
P
C
1.0
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note 1: Pulse Width 100mS, Duty Cycle 30%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Base Breakdown Voltage
V
(BR)CBO
I
C
=100 A, I
E
=0
40
-
-
V
Collector Emitter Breakdown Voltage (1)
V
(BR)CEO
I
C
=1mA, I
B
=0
20
-
-
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
7
-
-
V
Collector Cutoff Current
I
CBO
V
CB
=20V, I
E
=0
-
-
100
nA
Emitter Cutoff Current
I
EBO
V
EB
=7V, I
C
=0
-
-
100
nA
DC Current Gain
h
FE
(1)(Note1)
V
CE
=2V, I
C
=0.5A
120
-
700
h
FE
(2)
V
CE
=2V, I
C
=2A
100
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=3A, I
B
=60mA(Pulse)
-
-
0.4
V
Transition Frequency
f
T
V
CE
=6V, I
C
=50mA
20
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=20V, f=1MHz, I
E
=0
-
-
50
pF
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+_
+_
+_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27
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KTC3072D/L
Revision No : 3
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
0
40
20
0.2
C
0
COLLECTOR POWER DISSIPATION P (W)
COLLECTOR CURRENT I (A)
0
C
0.4
0.4
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR CURRENT I (A)
0
C
0.4
0.2
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
TRANSITION FREQUENCY f (MHz)
T
EMITTER CURRENT I (A)
E
E
T
f - I
h - I
FE
C
C
COLLECTOR CURRENT I (A)
0.01
0.03
100
FE
0
DC CURRENT GAIN h
I - V
C
CE(sat)
CE(sat)
COLLECTOR-EMITTER SATURATION
0
0.2
0.4
C
0
COLLECTOR CURRENT I (A)
60
80
100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.2
1.6
2.0
2.4
2.8
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.4
Ta=25 C
2mA
3mA
4mA
5mA
6mA
I =1mA
B
7mA
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
8
V =10V
Ta=25 C
CE
VOLTAGE V (V)
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
8
I /I =30
Ta=25 C
C B
0
100
0.1
0.3
1
3
10
200
300
400
500
600
700
800
V =2V
Ta=25 C
CE
10
3
1
0.3
0.1
0.03
0.01
200
300
400
V =6V
Ta=25 C
CE
Ta=25 C
2003. 3. 27
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KTC3072D/L
Revision No : 3
COLLECTOR CURRENT I (A)
C
0.01
10
0.1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATION AREA
C - V
ob
CB
CB
COLLECTOR BASE VOLTAGE V (V)
1
3
10
100
ob
0
OUTPUT CAPACITANCE C (pF)
20
40
60
80
5
30 50
100
I =0
f=1MHz
Ta=25 C
E
0.3
1
3
30
100
0.03
0.1
0.3
1
3
10
30
100
I MAX.(PULSED)*
C
I MAX.
C
t=10ms
*
t=1s *
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
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